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dc.contributor.authorTseng, Chi-Cheen_US
dc.contributor.authorChou, Shu-Tingen_US
dc.contributor.authorLin, Shin-Yenen_US
dc.contributor.authorChen, Cheng-Nanen_US
dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorChen, Yi-Haoen_US
dc.contributor.authorChung, Tung-Hsunen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2014-12-08T15:10:43Z-
dc.date.available2014-12-08T15:10:43Z-
dc.date.issued2008-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2990784en_US
dc.identifier.urihttp://hdl.handle.net/11536/8197-
dc.description.abstractThis study explores the growth and effects of a ten-period InAs/GaAs quantum-dot infrared photodetector (QDIP). With a uniform quantum-dot (QD) size distribution and a QD density of 2.8x10(10) cm(-2), this 10 K photoluminescence spectrum shows a peak energy at 1.07 eV and a narrow full width at half maximum of 31.7 meV. The QDIP exhibits an asymmetric response under different voltage polarities and a high responsivity of 1.7 A/W at -1.1 V. Another noticeable observation in the spectral response of the device is the 6 mu m peak detection wavelength with a high spectral broadening Delta lambda/lambda of 0.67. By analyses of the photoluminescence excitation spectrum and the temperature dependence of spectral response, the wide spectral response of the QDIP is attributed to the summation of transitions between QD excited states and the wetting layer states, instead of transitions between QD ground state and higher excited states.en_US
dc.language.isoen_USen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectphotodetectorsen_US
dc.subjectphotoluminescenceen_US
dc.subjectself-assemblyen_US
dc.subjectsemiconductor quantum dotsen_US
dc.subjectspectral line broadeningen_US
dc.titleThe transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.2990784en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume26en_US
dc.citation.issue6en_US
dc.citation.spage1831en_US
dc.citation.epage1833en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000261385600003-
dc.citation.woscount5-
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