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dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYeh, Jui-Lungen_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:10:44Z-
dc.date.available2014-12-08T15:10:44Z-
dc.date.issued2008-11-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3006126en_US
dc.identifier.urihttp://hdl.handle.net/11536/8213-
dc.description.abstractThe authors provided the formation and memory effects of nonvolatile multilayer nickel-silicide nanocrystal memory in this study. This proposed structure can efficiently improve the drawbacks of current floating gate and single-layer nanocrystal memories for the next-generation nonvolatile memory application. The charge trapping layer of multilayer structure was deposited by sputtering a commixed target (Ni(0.3)Si(0.7)) in the argon and nitrogen ambiance, and then used a low temperature rapid thermal annealing to form uniform nanocrystals. Transmission electron microscope images clearly show the multilayer and single-layer nanocrystal structures embedded in SiN(x). X-ray photoelectron spectroscopy and x-ray diffraction also present the chemical states and crystallization of nanocrystals under different annealing temperature treatments. The capacitor with different memory structures was also studied and exhibited hysteresis characteristics after electrical operation. In addition, the multilayer nanocrystals revealed better charge storage ability and reliability than the single-layer nanocrystals. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006126]en_US
dc.language.isoen_USen_US
dc.titleFormation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3006126en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume104en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260941700099-
dc.citation.woscount11-
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