標題: UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin-Film Transistors
作者: Li, Yiming
Hwang, Chih-Hong
Chen, Chung-Le
Yan, Shuoting
Lou, Jen-Chung
電子工程學系及電子研究所
電信工程研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Communications Engineering
關鍵字: Amorphous silicon thin-film transistors (a-Si:H TFTs);band-to-hand tunneling;device simulation and characterization;leakage current;trap-assisted tunneling;ultraviolet (UV) illumination
公開日期: 1-Nov-2008
摘要: The high photoconductivity of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) is responsible for the leakage current under illumination-particularly in projectors and displays with high-intensity backlight illumination. This work investigates a leakage current reduction approach, in which the inverted staggered a-Si:H TFTs are exposed to the ultraviolet (UV) laser. An 85% reduction in the leakage current in a-Si:H TFTs is experimentally observed. The general SPICE model (such as the RPI model) lacks the proper term to capture the photo-induced phenomena; therefore, the physical mechanisms that are associated with the illumination of a-Si:H TFTs under UV, including the energy state and the density of traps, are analyzed using device simulation. The I-V characteristics of the inverted staggered a-Si:H TFTs under different magnitudes of UV exposure are calibrated with experimentally measured data. The preliminary results show the change of trap states in amorphous silicon film and a shift of the Fermi level with UV illumination. UV illumination may induce traps in the active layer of the device and thereby reduce the OFF-state leakage current.
URI: http://dx.doi.org/10.1109/TED.2008.2005133
http://hdl.handle.net/11536/8218
ISSN: 0018-9383
DOI: 10.1109/TED.2008.2005133
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 55
Issue: 11
起始頁: 3314
結束頁: 3318
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