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dc.contributor.authorChou, Rone-Hwaen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:10:45Z-
dc.date.available2014-12-08T15:10:45Z-
dc.date.issued2008-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.8419en_US
dc.identifier.urihttp://hdl.handle.net/11536/8222-
dc.description.abstractWe investigated the characteristics of sub-picosecond radiation pulses from mid-size-gap multi-energy arsenic-ion-implanted GaAs photoconductive antennas in terahertz time-domain spectroscopy experiments. At fixed fluence excitation, both the bandwidth and the negative peak of terahertz waveform minimum reveal increasing trends with increases in the antenna's gap. We reproduce both the measured terahertz waveforms and increasing trends numerically, by calculating a model that incorporates the trap-enhanced bias field with wave equation. We deduce from our simulation that the gap-dependent behavior stems from the fact that an antenna with a larger gap has a stronger trap-enhanced bias field near the anode edge and thereby induces a larger space-charge screening effect and bandwidth. [DOI: 10.1143/JJAP.47.8419]en_US
dc.language.isoen_USen_US
dc.subjectphotoconductive antennaen_US
dc.subjectterahertzen_US
dc.subjectmulti-energy arsenic-ion-implanted GaAs (multi-GaAs:As(+))en_US
dc.subjectfemtoseconden_US
dc.subjectfull-wave modelen_US
dc.subjectspace-charge screeningen_US
dc.titleGap-Dependent Terahertz Pulses from Mid-Size-Gap Multi-Energy Arsenic-Ion-Implanted GaAs Antennasen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.8419en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue11en_US
dc.citation.spage8419en_US
dc.citation.epage8425en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000261311400038-
dc.citation.woscount1-
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