標題: Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
作者: Lin, Chih-Yang
Lin, Meng-Han
Wu, Ming-Chi
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nonvolatile memory (NVM);resistive random access memory (RRAM);resistive switching;stabilization;SrZrO3
公開日期: 1-十月-2008
摘要: The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.
URI: http://dx.doi.org/10.1109/LED.2008.2002879
http://hdl.handle.net/11536/8304
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2002879
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 10
起始頁: 1108
結束頁: 1111
顯示於類別:期刊論文


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