完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Ying-Xuan | en_US |
dc.contributor.author | Tseng, Shin-Rong | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.contributor.author | Lee, Kuan-Chen | en_US |
dc.contributor.author | Liu, Chiou-Hua | en_US |
dc.contributor.author | Horng, Sheng-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:10:54Z | - |
dc.date.available | 2014-12-08T15:10:54Z | - |
dc.date.issued | 2008-09-29 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2972115 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8338 | - |
dc.description.abstract | The carrier recombination in organic solar cells is investigated by numerical modeling to understand the weak dependence of theopen-circuit voltage on the workfunction of the electrodes. In Ohmic contact structures, photocarriers recombine predominantly with dark carriers diffused from the electrode into the semiconductor. Such dark carrier recombination becomes the main limit of power conversion efficiency and open-circuit voltage. For a given semiconductor decreasing the workfunction difference of the electrodes reduces simultaneously the dark carrier recombination and the flat band voltage. The balance between these two opposite factors gives a nearly constant open-circuit voltage. In an ideal bilayer structure there is no dark carrier recombination and the efficiency is demonstrated to be 60% higher than single layer blend. (C) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dark carrier recombination in organic solar cell | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2972115 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 93 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000259794100106 | - |
dc.citation.woscount | 16 | - |
顯示於類別: | 期刊論文 |