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dc.contributor.authorWang, Ying-Xuanen_US
dc.contributor.authorTseng, Shin-Rongen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorLee, Kuan-Chenen_US
dc.contributor.authorLiu, Chiou-Huaen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.date.accessioned2014-12-08T15:10:54Z-
dc.date.available2014-12-08T15:10:54Z-
dc.date.issued2008-09-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2972115en_US
dc.identifier.urihttp://hdl.handle.net/11536/8338-
dc.description.abstractThe carrier recombination in organic solar cells is investigated by numerical modeling to understand the weak dependence of theopen-circuit voltage on the workfunction of the electrodes. In Ohmic contact structures, photocarriers recombine predominantly with dark carriers diffused from the electrode into the semiconductor. Such dark carrier recombination becomes the main limit of power conversion efficiency and open-circuit voltage. For a given semiconductor decreasing the workfunction difference of the electrodes reduces simultaneously the dark carrier recombination and the flat band voltage. The balance between these two opposite factors gives a nearly constant open-circuit voltage. In an ideal bilayer structure there is no dark carrier recombination and the efficiency is demonstrated to be 60% higher than single layer blend. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleDark carrier recombination in organic solar cellen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2972115en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000259794100106-
dc.citation.woscount16-
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