Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints

doi:10.1063/1.2990047

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Hsiao-Yun	en_US
dc.contributor.author	Chen, Chih	en_US
dc.contributor.author	Tu, King-Ning	en_US
dc.date.accessioned	2014-12-08T15:10:54Z	-
dc.date.available	2014-12-08T15:10:54Z	-
dc.date.issued	2008-09-22	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2990047	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8343	-
dc.description.abstract	Failure induced by thermomigration in Pb-free SnAg flip chip solder joints has been investigated by electromigration tests under 9.7 x 10(3) A/cm(2) at 150 degrees C. The fast interstitial diffusion of Cu atoms from underbump metallization into Sn matrix caused void formation at the passivation opening on the chip side. The Cu diffusion was driven by a large thermal gradient and led to void formation even in the neighboring unpowered bumps. When the thermal gradient is above 400 degrees C/cm, theoretical calculation indicates that the thermomigration force is greater than the electromigration force at 9.7 x 10(3) A/cm(2) stressing. (C) 2008 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2990047	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	93	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000259799100034	-
dc.citation.woscount	18	-
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