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dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorLiang, Mei-Huien_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorLin, Chih-Weien_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:10:55Z-
dc.date.available2014-12-08T15:10:55Z-
dc.date.issued2008-09-22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2988167en_US
dc.identifier.urihttp://hdl.handle.net/11536/8344-
dc.description.abstractNonpolar (11 (2) over bar0) ZnO films were grown on LaAlO(3) (001) single crystal substrates at temperature from 300 to 750 S C by pulsed laser deposition method. The films were examined using x-ray diffraction, reflection high energy electron diffraction, and photoluminescence measurements for the crystallinity. The surface morphology of ZnO films from atomic force microscopy exhibits L-shaped domains. Cross-sectional transmission electron microscopy with selected area diffraction reveals two types of a-plane ZnO domains perpendicular to each other with in-plane orientation relationships of [0001](ZnO)en_US
dc.description.abstract[1 (1) over bar0](LAO) and [1 (1) over bar 00](ZnO)en_US
dc.description.abstract[1 (1) over bar0](LAO). (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleGrowth of nonpolar (11(2)over-bar0) ZnO films on LaAlO(3) (001) substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2988167en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000259799100029-
dc.citation.woscount23-
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