Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties

doi:10.1063/1.2981703

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Chung-Yang	en_US
dc.contributor.author	Lu, Ming-Pei	en_US
dc.contributor.author	Liao, Kao-Feng	en_US
dc.contributor.author	Wu, Wen-Wei	en_US
dc.contributor.author	Chen, Lih-Juann	en_US
dc.date.accessioned	2014-12-08T15:10:55Z	-
dc.date.available	2014-12-08T15:10:55Z	-
dc.date.issued	2008-09-15	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2981703	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8347	-
dc.description.abstract	Vertically well-aligned single crystal Ni(31)Si(12) nanowire (NW) arrays were epitaxially grown on Ni(31)Si(12) films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni(31)Si(12) NWs are several micrometers in length and 50-80 nm in diameter. The resistivities of the Ni(31)Si(12) NWs were measured to be 51 mu Omega cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni(31)Si(12) NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices. (C) 2008 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2981703	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	93	en_US
dc.citation.issue	11	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000259797900071	-
dc.citation.woscount	27	-
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