標題: | Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices |
作者: | Chen, Sheng-Yu Yeh, Ping-Hung Wu, Wen-Wei Chen, Uei-Shin Chueh, Yu-Lun Yang, Yu-Chen Gwo, Shangir Chen, Lih-Juann 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | nickel suicide;nanowires;low resistivity;high aspect ratio;epitaxy;nanoelectronic devices |
公開日期: | 1-十一月-2011 |
摘要: | One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NISI has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi(2), which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects. |
URI: | http://dx.doi.org/10.1021/nn203445p http://hdl.handle.net/11536/14674 |
ISSN: | 1936-0851 |
DOI: | 10.1021/nn203445p |
期刊: | ACS NANO |
Volume: | 5 |
Issue: | 11 |
起始頁: | 9202 |
結束頁: | 9207 |
顯示於類別: | 期刊論文 |