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dc.contributor.authorLin, Jin-Shyongen_US
dc.contributor.authorChen, Chien-Chonen_US
dc.contributor.authorDiau, Eric Wei-Guangen_US
dc.contributor.authorLiu, Tzeng-Fengen_US
dc.date.accessioned2014-12-08T15:10:55Z-
dc.date.available2014-12-08T15:10:55Z-
dc.date.issued2008-09-12en_US
dc.identifier.issn0924-0136en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmatprotec.2007.12.069en_US
dc.identifier.urihttp://hdl.handle.net/11536/8354-
dc.description.abstractHypoeutectic, eutectic and hypereutectic gold-silicon (Au-Si) alloys were synthesized using vacuum smelting. When Au and Si were smelted in a vacuum chamber near 1100 degrees C, Si-(g), Si-2(g), Si-3(g), SiO2(g), Au-(g), SiO2(s) and Au2O3(s) were formed rapidly; the quantities of Au and Si lost were estimated from thermodynamic formulas. The nano- and microstructures of the Au-Si,eutectic compound were characterized with a SEM and a TEM, which showed a discontinuous phase of Si dispersed and mounted within a matrix phase of Au. Cracks that formed about the Au-Si interface made the Au-Si eutectic brittle. From an Au-Si alloy of superior quality as a bulk material, eutectic nanowires of average diameter 60 nm were fabricated after the alloy was melted and injected into an anodic aluminum-oxide (AAO) template. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAAOen_US
dc.subjectAu-Si alloyen_US
dc.subjectdie-castingen_US
dc.subjecteutectic nanowireen_US
dc.subjectvacuum smeltingen_US
dc.titleFabrication and characterization of eutectic gold-silicon (Au-Si) nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jmatprotec.2007.12.069en_US
dc.identifier.journalJOURNAL OF MATERIALS PROCESSING TECHNOLOGYen_US
dc.citation.volume206en_US
dc.citation.issue1-3en_US
dc.citation.spage425en_US
dc.citation.epage430en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000257563200054-
dc.citation.woscount3-
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