High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films

doi:10.1049/el:20081620

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DC Field	Value	Language
dc.contributor.author	Chang, C. -P.	en_US
dc.contributor.author	Wu, Y. S.	en_US
dc.date.accessioned	2014-12-08T15:10:55Z	-
dc.date.available	2014-12-08T15:10:55Z	-
dc.date.issued	2008-09-11	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20081620	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8355	-
dc.description.abstract	In this process, amorphous silicon was first transformed to polycrystalline silicon (poly-Si) using a metal-induced lateral crystallisation (MILC) process, followed by annealing with a continuous-wave laser lateral (lambda similar to 532 nm) crystallisation (CLC) with an output power of 3.8 W. MILC-CLC-TFT performed far superior to MILC-TFT. The mobility of the MILC-CLC-TFT was 293 cm(2)/Vs, which was much higher than that of MILC TFTs (54.8 cm(2)/Vs). In addition, MILC-CLC TFTs showed better device uniformity and reliability.	en_US
dc.language.iso	en_US	en_US
dc.title	High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20081620	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	44	en_US
dc.citation.issue	19	en_US
dc.citation.spage	1157	en_US
dc.citation.epage	U21	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000259155000036	-
dc.citation.woscount	2	-
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