| Title: | Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots |
| Authors: | Lin, S. D. Ilchenko, V. V. Marin, V. V. Panarin, K. Y. Buyanin, A. A. Tretyak, O. V. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 8-Sep-2008 |
| Abstract: | The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. (c) 2008 American Institute of Physics. |
| URI: | http://dx.doi.org/10.1063/1.2975169 http://hdl.handle.net/11536/8363 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.2975169 |
| Journal: | APPLIED PHYSICS LETTERS |
| Volume: | 93 |
| Issue: | 10 |
| End Page: | |
| Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature / Lin, S. D.;Ilchenko, V. V.;Marin, V. V.;Shkil, N. V.;Buyanin, A. A.
- Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes / Chen, JF;Chen, NC;Wang, JS;Chen, YF
- 建立電路模型探討頻率對InAs量子點蕭基二極體電性之影響 / 吳孟駿;陳振芳;Wu, Meng-Chun;Chen, Jenn-Fang
- 量子點負微分電容特性研究 / 林聖迪;LIN SHENG DI
- Room temperature negative differential capacitance in self-assembled quantum dots / Ilchenko, V. V.;Marin, V. V.;Lin, S. D.;Panarin, K. Y.;Buyanin, A. A.
Loading...