Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

標題:	Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature
作者:	Lin, S. D. Ilchenko, V. V. Marin, V. V. Shkil, N. V. Buyanin, A. A. Panarin, K. Y. Tretyak, O. V. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	25-六月-2007
摘要:	The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.
URI:	http://dx.doi.org/10.1063/1.2752737 http://hdl.handle.net/11536/10670
ISSN:	0003-6951
DOI:	10.1063/1.2752737
期刊:	APPLIED PHYSICS LETTERS
Volume:	90
Issue:	26
結束頁:
顯示於類別：	期刊論文

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