Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature
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DOI
10.1063/1.2752737
Abstract
The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.