Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature
| dc.citation.epage | en_US | |
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Lin, S. D. | en_US |
| dc.contributor.author | Ilchenko, V. V. | en_US |
| dc.contributor.author | Marin, V. V. | en_US |
| dc.contributor.author | Shkil, N. V. | en_US |
| dc.contributor.author | Buyanin, A. A. | en_US |
| dc.contributor.author | Panarin, K. Y. | en_US |
| dc.contributor.author | Tretyak, O. V. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:49Z | |
| dc.date.available | 2014-12-08T15:13:49Z | |
| dc.date.issued | 2007-06-25 | en_US |
| dc.description.abstract | The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs. | en_US |
| dc.identifier.doi | 10.1063/1.2752737 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2752737 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10670 | |
| dc.identifier.wosnumber | WOS:000247625500079 | |
| dc.language.iso | en_US | en_US |
| dc.title | Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature | en_US |
| dc.type | Article | en_US |