A simple method to characterize the afterpulsing effect in single photon avalanche photodiode

doi:10.1063/1.2968434

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DC 欄位	值	語言
dc.contributor.author	Yen, H. T.	en_US
dc.contributor.author	Lin, S. D.	en_US
dc.contributor.author	Tsai, C. M.	en_US
dc.date.accessioned	2014-12-08T15:11:00Z	-
dc.date.available	2014-12-08T15:11:00Z	-
dc.date.issued	2008-09-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2968434	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8422	-
dc.description.abstract	A simple method is introduced for studying the afterpulsing effect in InGaAs single photon avalanche photodiode. The afterpulsing probability is obtained through measuring the detection efficiencies of various biasing pulses, while the incident photons are kept constant. The effect of excess bias and temperature on the afterpulsing probability is investigated. When the device temperature is higher than 170 K, the afterpulsing probability is lower than 5% for all excess bias voltages because the trapped carrier lifetime is much shorter than the repetition period. (C) 2008 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	A simple method to characterize the afterpulsing effect in single photon avalanche photodiode	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2968434	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	104	en_US
dc.citation.issue	5	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000259853600124	-
dc.citation.woscount	3	-
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