A simple method to characterize the afterpulsing effect in single photon avalanche photodiode

標題:	A simple method to characterize the afterpulsing effect in single photon avalanche photodiode
作者:	Yen, H. T. Lin, S. D. Tsai, C. M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-九月-2008
摘要:	A simple method is introduced for studying the afterpulsing effect in InGaAs single photon avalanche photodiode. The afterpulsing probability is obtained through measuring the detection efficiencies of various biasing pulses, while the incident photons are kept constant. The effect of excess bias and temperature on the afterpulsing probability is investigated. When the device temperature is higher than 170 K, the afterpulsing probability is lower than 5% for all excess bias voltages because the trapped carrier lifetime is much shorter than the repetition period. (C) 2008 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2968434 http://hdl.handle.net/11536/8422
ISSN:	0021-8979
DOI:	10.1063/1.2968434
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	104
Issue:	5
結束頁:
顯示於類別：	期刊論文

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