標題: High-frequency electrical properties of silver thick films measured by dielectric resonator method
作者: Lin, Hong-Ching
Lin, Pang
Lu, Chun-An
Wang, Sea-Fue
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: electrical properties;microwave frequency;silver film;metallo-organic decomposition compound
公開日期: 1-九月-2008
摘要: The electrical properties of silver films, prepared using a low-curing-temperature metallo-organic-decomposition (MOD) paste and a high-temperature silver paste screen-printed on polished and nonpolished alumina substrates, at microwave frequency were characterized in this Study. Surface resistance and effective conductivity of the silver films at microwave frequency (approximately 4 GHz) were evaluated using the TE(011) mode of the resonator cavities method. Devices of T-type resonator circuits were fabricated to determine the simulated and measured Q-values and to evaluate the effects of silver films and the surrounding substrate. The surface roughness of the fired films printed on nonpolished Al(2)O(3) substrate is slightly less than those on polished Substrate. because the surface energy of the nonpolished alumina (29.81 mN/m) is slightly less than that of the polished alumina (36.69 mN/m). The calculated effective conductivities at 4.3 GHz are slightly less than the DC conductivities of the films. Moreover, the films prepared using the high temperature silver paste have higher electrical conductivity ranging from 4.08 x 10(7) to 4.13 x 10(7) S/m, Since the high-temperature firing process leads to an improved connectivity of the silver particles. The results indicate that the films screen-printed on the polished substrate have a higher Q and a lower Delta Q value than those of films that are screen-printed on the nonpolished substrate. For the silver films prepared using the high-temperature silver paste, both the Q and Delta Q values were the highest among the films studied, which is consistent with the observation of the dense microstructure of the silver film and the interfacial reaction between the Mass in the film and tie Substrate as a result of high firing temperature.
URI: http://dx.doi.org/10.1143/JJAP.47.7289
http://hdl.handle.net/11536/8429
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.7289
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 9
起始頁: 7289
結束頁: 7294
顯示於類別:期刊論文


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