完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Kuan-Chiaen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorLiao, Chien-Nengen_US
dc.contributor.authorChen, Lih-Juannen_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:11:02Z-
dc.date.available2014-12-08T15:11:02Z-
dc.date.issued2008-08-22en_US
dc.identifier.issn0036-8075en_US
dc.identifier.urihttp://dx.doi.org/10.1126/science.1160777en_US
dc.identifier.urihttp://hdl.handle.net/11536/8453-
dc.description.abstractGrain boundaries affect the migration of atoms and electrons in polycrystalline solids, thus influencing many of the mechanical and electrical properties. By introducing nanometer- scale twin defects into copper grains, we show that we can change the grain- boundary structure and atomic- diffusion behavior along the boundary. Using in situ ultrahigh- vacuum and high- resolution transmission electron microscopy, we observed electromigration- induced atomic diffusion in the twin- modified grain boundaries. The triple point where a twin boundary meets a grain boundary was found to slow down grain- boundary and surface electromigration by one order of magnitude. We propose that this occurs because of the incubation time of nucleation of a new step at the triple points. The long incubation time slows down the overall rate of atomic transport.en_US
dc.language.isoen_USen_US
dc.titleObservation of atomic diffusion at twin-modified grain boundaries in copperen_US
dc.typeArticleen_US
dc.identifier.doi10.1126/science.1160777en_US
dc.identifier.journalSCIENCEen_US
dc.citation.volume321en_US
dc.citation.issue5892en_US
dc.citation.spage1066en_US
dc.citation.epage1069en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000258594900033-
dc.citation.woscount120-
顯示於類別:期刊論文


文件中的檔案:

  1. 000258594900033.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。