標題: Effect of Under-Layer Treatment of Ta/TaN Barrier Film on Corrosion Between Cu Seed and Ta in Chemical-Mechanical-Polishing Slurry
作者: Lee, Wen-Hsi
Hung, Chi-Cheng
Wang, Yu-Sheng
Chang, Shih-Chieh
Wang, Ying-Lang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Corrosion;Ar;Electrochemical Impedance Spectroscopy
公開日期: 1-Jul-2010
摘要: Tantalum/tantalum nitride (Ta/TaN(x)) composite film is widely used as a copper (Cu) diffusion barrier layer. In order to reduce via-resistance, an additional argon (Ar) re-sputtering process is used to thin the barrier thickness at the feature bottom. In this study, the effect of (Ar) re-sputtering of the under-layer of TaN(x) barrier films on the corrosion between Cu seeds and upper Ta films in chemical-mechanical-polishing (CMP) slurries was investigated. The results show that Ar re-sputtering of the under-layer of the TaN(x) barrier has a strong influence on the corrosion of Cu seeds and Ta films. The equivalent circuit, simulated using data from electrochemical analysis, reveals changes in resistance and capacitance elements of the Cu-Ta electrochemical system, proving that the phase transformation of upper Ta films under different TaN(x) conditions leads to different degrees corrosion of Cu seeds and the Ta films.
URI: http://dx.doi.org/10.1166/jnn.2010.2448
http://hdl.handle.net/11536/8456
ISSN: 1533-4880
DOI: 10.1166/jnn.2010.2448
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 10
Issue: 7
起始頁: 4196
結束頁: 4203
Appears in Collections:Conferences Paper