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dc.contributor.authorTseng, Sheng-Cheen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorLee, Yueh-Tingen_US
dc.date.accessioned2014-12-08T15:11:04Z-
dc.date.available2014-12-08T15:11:04Z-
dc.date.issued2008-08-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2008.926526en_US
dc.identifier.urihttp://hdl.handle.net/11536/8492-
dc.description.abstractAdjustable and reactive in-phase/quadrature (I/Q) generators with constant resistance are proposed for the first time in this paper with the properties of low loss, dual-band implementation, and high quadrature accuracy. The quadrature phase property and input matching of the I/Q generator can be achieved at all frequencies simultaneously by the constant-resistance I/Q generator. However, the magnitude balance of the dual-band T/Q generator is achieved at two designed frequencies. A 2.4/5.2-GHz I/Q down-converter and a 2.4/5.7-GHz single-sideband up-converter are fabricated using 0.35-mu m SiGe BiCMOS technology. The dual-band I/Q generator along with two single-to-differential amplifiers is integrated to provide differential quadrature local oscillator signals for dual-band mixers. The magnitude imbalance and phase error between the I and Q channels of the down-converter are < 1% and < 1 degrees, respectively, while the maximum sideband rejection ratio of the up-converter is up to 50 dB. Additionally, the operation bandwidth (sideband rejection ratio > 30 dB) is 200 MHz at 2.4 GHz and 720 MHz at 5.7 GHz.en_US
dc.language.isoen_USen_US
dc.subjectdown-converteren_US
dc.subjectdual banden_US
dc.subjectin-phase/quadrature (I/Q)en_US
dc.subjectSiGeBiCMOSen_US
dc.subjectsingle sideband (SSB)en_US
dc.subjectSSB rejection ratioen_US
dc.subjectup-converteren_US
dc.titleDual-band adjustable and reactive I/Q generator with constant resistance for down- and up-convertersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2008.926526en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume56en_US
dc.citation.issue8en_US
dc.citation.spage1861en_US
dc.citation.epage1868en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000258504300012-
dc.citation.woscount4-
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