標題: | Formation mechanisms and atomic configurations of nitride phases at the interface of aluminum nitride and titanium |
作者: | Chiu, Chia-Hsiang Lin, Chien-Cheng 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-Aug-2008 |
摘要: | Aluminum nitride was bonded with a titanium foil at 1400 degrees C for up to 1 h in Ar. The AlN/Ti interfacial reactions were investigated using analytical electron microscopy. Reaction layers, consisting of delta-TiN, tau(2)-Ti2AlN, gamma-TiAl, alpha(2)-Ti3Al, a two-phase region (alpha(2)-Ti3Al + alpha-Ti), and alpha-Ti (Al, N) solid solution, were observed after annealing at 1400 degrees C for 0.1 h. Among these phases, the alpha(2)-Ti3Al and (alpha(2)-Ti3Al + alpha-Ti) were formed during cooling. Further diffusion of N atoms into the reaction zone precipitates a chopped fiber-like alpha(2)-Ti2AlN in the matrix of gamma-TiAl, with [110](gamma-TiAl)//[11 (2) over bar0](tau 2-Ti2AlN) and (1 (1) over bar(1) over bar)(gamma-TiAl)//(1 (1) over bar0 (3) over bar)(tau 2-Ti2AlN), by substituting N atoms for one-half Al atoms after annealing at 1400 degrees C for 1 h. The released Al atoms, due to the precipitation Of tau(2)-Ti2AlN, resulted in an ordered Al-rich gamma-TiAl or Ti3Al5. Furthermore, the alpha-Ti (Al, N) was nitridized into a lamellar layer (delta-TiN + alpha-Ti) with [110](delta-TiN)//[11 (2) over bar0](alpha-Ti) and (111)(delta-TiN)//(0001)(alpha-Ti). |
URI: | http://dx.doi.org/10.1557/jmr.2008.0268 http://hdl.handle.net/11536/8522 |
ISSN: | 0884-2914 |
DOI: | 10.1557/jmr.2008.0268 |
期刊: | JOURNAL OF MATERIALS RESEARCH |
Volume: | 23 |
Issue: | 8 |
起始頁: | 2221 |
結束頁: | 2228 |
Appears in Collections: | Articles |
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