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dc.contributor.authorDhananjayen_US
dc.contributor.authorOu, Chun-Weien_US
dc.contributor.authorYang, Chuan-Yien_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:11:10Z-
dc.date.available2014-12-08T15:11:10Z-
dc.date.issued2008-07-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2949872en_US
dc.identifier.urihttp://hdl.handle.net/11536/8561-
dc.description.abstractIn this Letter, ambipolar transport properties of a bilayer of In(2)O(3) and a pentacene heterostructure have been realized. While In(2)O(3) thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO(2)/p-Si substrates. However, when a bilayer of In(2)O(3)/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleAmbipolar transport behavior in In(2)O(3)/pentacene hybrid heterostructure and their complementary circuitsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2949872en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000257968700081-
dc.citation.woscount0-
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