完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Dhananjay | en_US |
dc.contributor.author | Ou, Chun-Wei | en_US |
dc.contributor.author | Yang, Chuan-Yi | en_US |
dc.contributor.author | Wu, Meng-Chyi | en_US |
dc.contributor.author | Chu, Chih-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:11:10Z | - |
dc.date.available | 2014-12-08T15:11:10Z | - |
dc.date.issued | 2008-07-21 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2949872 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8561 | - |
dc.description.abstract | In this Letter, ambipolar transport properties of a bilayer of In(2)O(3) and a pentacene heterostructure have been realized. While In(2)O(3) thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO(2)/p-Si substrates. However, when a bilayer of In(2)O(3)/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits. (C) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ambipolar transport behavior in In(2)O(3)/pentacene hybrid heterostructure and their complementary circuits | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2949872 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 93 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000257968700081 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |