標題: Numerical simulation of nanoscale multiple-gate devices including random impurity effect
作者: Hwang, Chih-Hong
Li, Yiming
電信工程研究所
Institute of Communications Engineering
關鍵字: numerical simulation;3D model;"Atomistic" approach;fluctuation;random impurity;nanoscale device
公開日期: 2007
摘要: In this paper, a statistically sound "atomistic" approach for analyzing random impurity effect in nanoscale device is presented. The quantum confinement aspects associated with the coulomb potential wells of individual impurities are treated using the density gradient approach applied to the channel carriers in a hydrodynamic framework. The statistically generated large-scale doping profiles are similar to the physical process of ion implantation and the number of impurities inside channel follows normal distribution. Discrete dopants are statistically positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Our preliminary study extensively examines the threshold voltage fluctuations of various device structures, single-, multiple-, nanowire surrounding- and nanowire omega-gate. The presented approach is cost-effective in fluctuation analysis.
URI: http://hdl.handle.net/11536/8568
ISBN: 978-0-7354-0476-2
ISSN: 0094-243X
期刊: COMPUTATION IN MODERN SCIENCE AND ENGINEERING VOL 2, PTS A AND B
Volume: 2
起始頁: 1001
結束頁: 1004
顯示於類別:會議論文