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dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorPreciado, Jackieen_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:11:14Z-
dc.date.available2014-12-08T15:11:14Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-008-0463-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/8626-
dc.description.abstractIn Pb-free solder joints formed by reflowing a bump of solder paste, voids are formed within the solder due to the residue of flux in the reflow process. These voids migrate toward the cathode contact during electromigration under current stressing. Accompanying the electromigration, resistance jumps of a few 100 m Omega were observed. It was postulated that a jump occurs when a void touches the cathode contact. This study investigated the effect of the void migration and condensation on the change in bump resistance using three-dimensional (3D) simulations and finite element analysis. It was found that there was negligible change in bump resistance during void migration towards the high-current-density region before touching the cathode contact opening. When a small void condensed on the contact opening and depleted 18.4% of the area, the bump resistance increased only 0.4 m Omega. Even when a large void depleted 81.6% of the opening, the increase in bump resistance was 3.3 m Omega. These values are approximately two orders of magnitude smaller than those reported in the literature for the change in resistance due to void migration in flip chips on flexible substrates. We conclude that the reported change in resistance was most likely that of the Al or Cu interconnection in the flip-chip samples.en_US
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectflip-chip solder jointsen_US
dc.subjectpackagingen_US
dc.titleEffect of migration and condensation of pre-existing voids on increase in bump resistance of flip chips on flexible substrates during electromigrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-008-0463-yen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume37en_US
dc.citation.issue7en_US
dc.citation.spage962en_US
dc.citation.epage967en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000255876300005-
dc.citation.woscount1-
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