標題: A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse-T gate
作者: Lin, Horng-Chih
Hsu, Hsing-Hui
Su, Chun-Jung
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: field-effect transistor;multiple gate (MG);nanowire (NW);poly-Si
公開日期: 1-七月-2008
摘要: A novel multiple-gate field-effect transistor with poly-Si nanowire (NW) channels is proposed and fabricated using a simple process flow. In the proposed structure, poly-Si NW channels are formed with sidewall spacer etching technique, and are surrounded by an inverse-T-gate and a top gate. When the two gates are connected together to drive the NW channels, dramatic performance enhancement as compared with the cases of single-gate operation is observed. Moreover, subthreshold swing as low as 103 mV/dec at Vd = 2 V is recorded. Function of using the top gate bias to modulate the threshold voltage of device operation driven by the inverse-T gate biases is also investigated in this letter.
URI: http://dx.doi.org/10.1109/LED.2008.2000654
http://hdl.handle.net/11536/8643
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2000654
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 7
起始頁: 718
結束頁: 720
顯示於類別:期刊論文


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