Title: | A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse-T gate |
Authors: | Lin, Horng-Chih Hsu, Hsing-Hui Su, Chun-Jung Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | field-effect transistor;multiple gate (MG);nanowire (NW);poly-Si |
Issue Date: | 1-Jul-2008 |
Abstract: | A novel multiple-gate field-effect transistor with poly-Si nanowire (NW) channels is proposed and fabricated using a simple process flow. In the proposed structure, poly-Si NW channels are formed with sidewall spacer etching technique, and are surrounded by an inverse-T-gate and a top gate. When the two gates are connected together to drive the NW channels, dramatic performance enhancement as compared with the cases of single-gate operation is observed. Moreover, subthreshold swing as low as 103 mV/dec at Vd = 2 V is recorded. Function of using the top gate bias to modulate the threshold voltage of device operation driven by the inverse-T gate biases is also investigated in this letter. |
URI: | http://dx.doi.org/10.1109/LED.2008.2000654 http://hdl.handle.net/11536/8643 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2000654 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 7 |
Begin Page: | 718 |
End Page: | 720 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.