SONOS memories with embedded silicon nanocrystals in nitride

Title:	SONOS memories with embedded silicon nanocrystals in nitride
Authors:	Liu, Mei-Chun Chiang, Tsung-Yu Kuo, Po-Yi Chou, Ming-Hong Wu, Yi-Hong You, Hsin-Chiang Cheng, Ching-Hwa Liu, Sheng-Hsien Yang, Wen-Luh Lei, Tan-Fu Chao, Tien-Sheng 電子物理學系電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
Issue Date:	1-Jul-2008
Abstract:	We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N(2)O is better than O(2) oxide. Retention property is improved when the thickness of N(2)O is increased to 3.0 nm.
URI:	http://dx.doi.org/10.1088/0268-1242/23/7/075033 http://hdl.handle.net/11536/8659
ISSN:	0268-1242
DOI:	10.1088/0268-1242/23/7/075033
Journal:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume:	23
Issue:	7
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