標題: SONOS memories with embedded silicon nanocrystals in nitride
作者: Liu, Mei-Chun
Chiang, Tsung-Yu
Kuo, Po-Yi
Chou, Ming-Hong
Wu, Yi-Hong
You, Hsin-Chiang
Cheng, Ching-Hwa
Liu, Sheng-Hsien
Yang, Wen-Luh
Lei, Tan-Fu
Chao, Tien-Sheng
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-2008
摘要: We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N(2)O is better than O(2) oxide. Retention property is improved when the thickness of N(2)O is increased to 3.0 nm.
URI: http://dx.doi.org/10.1088/0268-1242/23/7/075033
http://hdl.handle.net/11536/8659
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/7/075033
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 23
Issue: 7
結束頁: 
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