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dc.contributor.authorLiu, Mei-Chunen_US
dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorKuo, Po-Yien_US
dc.contributor.authorChou, Ming-Hongen_US
dc.contributor.authorWu, Yi-Hongen_US
dc.contributor.authorYou, Hsin-Chiangen_US
dc.contributor.authorCheng, Ching-Hwaen_US
dc.contributor.authorLiu, Sheng-Hsienen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:11:17Z-
dc.date.available2014-12-08T15:11:17Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/23/7/075033en_US
dc.identifier.urihttp://hdl.handle.net/11536/8659-
dc.description.abstractWe have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N(2)O is better than O(2) oxide. Retention property is improved when the thickness of N(2)O is increased to 3.0 nm.en_US
dc.language.isoen_USen_US
dc.titleSONOS memories with embedded silicon nanocrystals in nitrideen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/23/7/075033en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume23en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000257201100034-
dc.citation.woscount2-
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