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dc.contributor.authorDhananjayen_US
dc.contributor.authorChu, Chih-Weien_US
dc.contributor.authorOu, Chun-Weien_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorHo, Zhong-Yoen_US
dc.contributor.authorHo, Kuo-Chuanen_US
dc.contributor.authorLee, Shih-Weien_US
dc.date.accessioned2014-12-08T15:11:22Z-
dc.date.available2014-12-08T15:11:22Z-
dc.date.issued2008-06-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2936275en_US
dc.identifier.urihttp://hdl.handle.net/11536/8722-
dc.description.abstractThin film transistors (TFTs) of indium oxide (In(2)O(3)) and tin oxide (SnO(2)) were fabricated on SiO(2) gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In(2)O(3) films were polycrystalline in nature with preferred (222) orientation and SnO(2) films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO(2) films were oxygen rich and presume mixed oxidation states of Sn, namely Sn(2+) and Sn(4+). While the In(2)O(3) based TFTs possess n-type channel conduction, SnO(2) based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleComplementary inverter circuits based on p-SnO(2) and n-In(2)O(3) thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2936275en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue23en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Articles