完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chuang, Chiao-Shun | en_US |
dc.contributor.author | Tsai, Shu-Ting | en_US |
dc.contributor.author | Lin, Yung-Sheng | en_US |
dc.contributor.author | Chen, Fang-Chung | en_US |
dc.contributor.author | Shieh, Han-Ping D. | en_US |
dc.date.accessioned | 2014-12-08T15:11:22Z | - |
dc.date.available | 2014-12-08T15:11:22Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.isbn | 978-7-5617-5228-9 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8723 | - |
dc.description.abstract | Organic thin-film transistors ( OTFTs) with reduced-photosensitivity have been made by blending titanium dioxide (TiO2) nanoparticles into the polymer dielectric layer. The minimized shift of threshold voltage and more stable photocurrent are attributed to the introduction of recombination centers induced by the doping of TiO2 nanoparticles. The localized energy levels deep in the energy gap and away from highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of pentacene may serve as the recombination centers, which can enhance substantially the recombination process in the OTFTs. In addition, it was found that the OTFTs with the above mentioned composite dielectric layers possess transparent and anti-glare functions comparable to the conventional devices. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | transparent | en_US |
dc.subject | OTFT | en_US |
dc.subject | photosensitivity | en_US |
dc.title | Transparent organic thin-film transistors with reduced photosensitivity | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | en_US |
dc.citation.spage | 1154 | en_US |
dc.citation.epage | 1157 | en_US |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000248022601012 | - |
顯示於類別: | 會議論文 |