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dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorTsai, Shu-Tingen_US
dc.contributor.authorLin, Yung-Shengen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:11:22Z-
dc.date.available2014-12-08T15:11:22Z-
dc.date.issued2007en_US
dc.identifier.isbn978-7-5617-5228-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/8723-
dc.description.abstractOrganic thin-film transistors ( OTFTs) with reduced-photosensitivity have been made by blending titanium dioxide (TiO2) nanoparticles into the polymer dielectric layer. The minimized shift of threshold voltage and more stable photocurrent are attributed to the introduction of recombination centers induced by the doping of TiO2 nanoparticles. The localized energy levels deep in the energy gap and away from highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of pentacene may serve as the recombination centers, which can enhance substantially the recombination process in the OTFTs. In addition, it was found that the OTFTs with the above mentioned composite dielectric layers possess transparent and anti-glare functions comparable to the conventional devices.en_US
dc.language.isoen_USen_US
dc.subjecttransparenten_US
dc.subjectOTFTen_US
dc.subjectphotosensitivityen_US
dc.titleTransparent organic thin-film transistors with reduced photosensitivityen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAD'07: Proceedings of Asia Display 2007, Vols 1 and 2en_US
dc.citation.spage1154en_US
dc.citation.epage1157en_US
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000248022601012-
顯示於類別:會議論文