Title: Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
Authors: Huang, Ting-Kai
Chen, Ying-Chieh
Ko, Hsin-Chun
Huang, Hsin-Wei
Wang, Chia-Hsin
Lin, Huang-Kai
Chen, Fu-Rong
Kai, Ji-Jung
Lee, Chi-Young
Chiu, Hsin-Tien
應用化學系
Department of Applied Chemistry
Issue Date: 3-Jun-2008
Abstract: A simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m.
URI: http://dx.doi.org/10.1021/la8000575
http://hdl.handle.net/11536/8731
ISSN: 0743-7463
DOI: 10.1021/la8000575
Journal: LANGMUIR
Volume: 24
Issue: 11
Begin Page: 5647
End Page: 5649
Appears in Collections:Articles


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