標題: | Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions |
作者: | Huang, Ting-Kai Chen, Ying-Chieh Ko, Hsin-Chun Huang, Hsin-Wei Wang, Chia-Hsin Lin, Huang-Kai Chen, Fu-Rong Kai, Ji-Jung Lee, Chi-Young Chiu, Hsin-Tien 應用化學系 Department of Applied Chemistry |
公開日期: | 3-Jun-2008 |
摘要: | A simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m. |
URI: | http://dx.doi.org/10.1021/la8000575 http://hdl.handle.net/11536/8731 |
ISSN: | 0743-7463 |
DOI: | 10.1021/la8000575 |
期刊: | LANGMUIR |
Volume: | 24 |
Issue: | 11 |
起始頁: | 5647 |
結束頁: | 5649 |
Appears in Collections: | Articles |
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