High-peak-power passively Q-switched Nd : YAG laser at 946 nm

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DC 欄位	值	語言
dc.contributor.author	Huang, Y. P.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Li, A.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:11:23Z	-
dc.date.available	2014-12-08T15:11:23Z	-
dc.date.issued	2008-06-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00340-008-2975-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8737	-
dc.description.abstract	We demonstrate a high-peak-power quasi-continuous-wave diode-pumped passive Q-switched Nd:YAG laser at 946 nm. We make a thorough comparison of the output performance between the saturable absorbers of InGaAs quantum wells (QWs) and a Cr4+:YAG crystal. Experimental results reveal that the saturable absorber of InGaAs QWs is superior to the Cr4+:YAG crystal because of the low nonsaturable losses and leads to a pulse energy of 330 mu J with a peak power greater than 11 kW.	en_US
dc.language.iso	en_US	en_US
dc.title	High-peak-power passively Q-switched Nd : YAG laser at 946 nm	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00340-008-2975-9	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	91	en_US
dc.citation.issue	3-4	en_US
dc.citation.spage	429	en_US
dc.citation.epage	432	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000256251400005	-
dc.citation.woscount	8	-
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