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dc.contributor.authorChang, Chia-Wenen_US
dc.contributor.authorChang, Che-Lunen_US
dc.contributor.authorLuo, Wun-Chenen_US
dc.contributor.authorLee, Jam-Wemen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:11:24Z-
dc.date.available2014-12-08T15:11:24Z-
dc.date.issued2007en_US
dc.identifier.isbn978-7-5617-5228-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/8756-
dc.description.abstractPerformance and reliability improvement for polycrystalline silicon thin-film transistors (poly-Si TFrs) with Argon ion implantation are proposed for the first time. By adopting this novel surface -nucleation solid -phase-cry stallization scheme, not only the grain size of poly-Si can be increased but also the intragranular defects can be suppressed effectively. Therefore, a high quality of poly-Si film in channel with better crystallinity is formed. Argon-implanted TFrs have been successfully fabricated and the experimental results demonstrate a superior field-effect mobility of 46. 06 cm(2)/VS, a fewer grain boundary trap density of 3.44 x 10(12) cm(-2) than those of conventional TFrs. The novel proposed structure is a very promising candidate for the future high-performance large-area device applications.en_US
dc.language.isoen_USen_US
dc.subjectsurface-nucleationen_US
dc.subjectinterface-nucleationen_US
dc.subjectsolid-phase epitaxy regrowthen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleEnhanced performance and reliability for solid phase crystallized poly-Si TFTs with argon ion implantationen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAD'07: Proceedings of Asia Display 2007, Vols 1 and 2en_US
dc.citation.spage1223en_US
dc.citation.epage1228en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248022601027-
Appears in Collections:Conferences Paper