標題: | High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure |
作者: | Chang, Chia-Wen Deng, Chih-Kang Chang, Che-Lun Liao, Ta-Chuan Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | floating-channel structure;surface nucleation;solid-phase crystallization (SPC);thin-film transistor (TFT) |
公開日期: | 1-四月-2008 |
摘要: | High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with a floating-channel active region (FC poly-Si TFTs) are proposed in this study. A high-quality poly-Si channel film accompanied by a larger grain size and fewer microstructural defects could be obtained. Compared with the conventional poly-Si TFTs (CN poly-Si TFTs), the fabricated FC poly-Si TFTs exhibit superior electrical characteristics, including lower threshold voltage, higher field-effect mobility, and lower trap state density. These electrical performance improvements could be attributed to the fact that the a-Si film with a floating-channel structure can relieve the stress generated from the crystallization process accompanying the trap state density reduction and grain size enhancement. In addition, the FC poly-Si TFTs also exhibit improved hot-carrier stress immunity due to the reduced weak Si-H bonds from fewer grain boundaries in the poly-Si channel. Therefore, the proposed FC poly-Si TFTs can be easily fabricated by conventional solid-phase crystallization, and suitable for future high-performance flat-panel display applications. |
URI: | http://dx.doi.org/10.1143/JJAP.47.3024 http://hdl.handle.net/11536/29954 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.47.3024 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 47 |
Issue: | 4 |
起始頁: | 3024 |
結束頁: | 3027 |
顯示於類別: | 會議論文 |