標題: | Two-dimensional carrier profiling by Kelvin-probe force Microscopy |
作者: | Tsui, Bing-Yue Hsieh, Chih-Ming Su, Po-Chih Tzeng, Shien-Der Gwo, Shangjr 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Kelvin-probe force microscopy;scanning probe microscopy;surface potential |
公開日期: | 1-六月-2008 |
摘要: | This paper reports the two-dimensional (2-D) carrier/dopant profiling technique by Kelvin-probe force microscopy (KFM). Before surface potential was measured, a feedback control circuit was used to improve signal response speed. The effect of surface treatment on the contrast in surface potential images was studied. Then the correlation between surface potential difference measured by KFM and surface carrier/dopant concentration obtained by spreading resistance profiling, the capacitance-voltage method, and secondary ion mass spectroscopy analysis was established. On the basis of these results, the carrier depth profiling of a p-n junction and the detection of a p-n junction array with small pitch have been successfully demonstrated. |
URI: | http://dx.doi.org/10.1143/JJAP.47.4448 http://hdl.handle.net/11536/8758 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.47.4448 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 47 |
Issue: | 6 |
起始頁: | 4448 |
結束頁: | 4453 |
顯示於類別: | 期刊論文 |