標題: Two-dimensional carrier profiling by Kelvin-probe force Microscopy
作者: Tsui, Bing-Yue
Hsieh, Chih-Ming
Su, Po-Chih
Tzeng, Shien-Der
Gwo, Shangjr
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Kelvin-probe force microscopy;scanning probe microscopy;surface potential
公開日期: 1-六月-2008
摘要: This paper reports the two-dimensional (2-D) carrier/dopant profiling technique by Kelvin-probe force microscopy (KFM). Before surface potential was measured, a feedback control circuit was used to improve signal response speed. The effect of surface treatment on the contrast in surface potential images was studied. Then the correlation between surface potential difference measured by KFM and surface carrier/dopant concentration obtained by spreading resistance profiling, the capacitance-voltage method, and secondary ion mass spectroscopy analysis was established. On the basis of these results, the carrier depth profiling of a p-n junction and the detection of a p-n junction array with small pitch have been successfully demonstrated.
URI: http://dx.doi.org/10.1143/JJAP.47.4448
http://hdl.handle.net/11536/8758
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.4448
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 6
起始頁: 4448
結束頁: 4453
顯示於類別:期刊論文


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