標題: | High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure |
作者: | Ma, Ming-Wen Chao, Tien-Sheng Su, Chun-Jung Wu, Woei-Cherng Kao, Kuo-Hsing Lei, Tan-Fu 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
關鍵字: | high-kappa;low-temperature poly-Si thin-film transistor (LTPS-TFT);metal gate;metal-induced lateral crystallization (MILC) |
公開日期: | 1-Jun-2008 |
摘要: | In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage V-TH similar to 0.095 V, excellent subthreshold swing S.S. similar to 83 mV/dec., and high field-effect mobility mu(FE) similar to 240 cm(2)/V center dot s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 mn. |
URI: | http://dx.doi.org/10.1109/LED.2008.921208 http://hdl.handle.net/11536/8775 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.921208 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 6 |
起始頁: | 592 |
結束頁: | 594 |
Appears in Collections: | Articles |
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