完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Su, Chun-Jung | en_US |
dc.contributor.author | Wu, Woei-Cherng | en_US |
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:11:26Z | - |
dc.date.available | 2014-12-08T15:11:26Z | - |
dc.date.issued | 2008-06-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.921208 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8775 | - |
dc.description.abstract | In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage V-TH similar to 0.095 V, excellent subthreshold swing S.S. similar to 83 mV/dec., and high field-effect mobility mu(FE) similar to 240 cm(2)/V center dot s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 mn. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | high-kappa | en_US |
dc.subject | low-temperature poly-Si thin-film transistor (LTPS-TFT) | en_US |
dc.subject | metal gate | en_US |
dc.subject | metal-induced lateral crystallization (MILC) | en_US |
dc.title | High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2008.921208 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 592 | en_US |
dc.citation.epage | 594 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000256189000017 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |