Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

doi:10.1109/68.544686

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, G	en_US
dc.contributor.author	Yen, ST	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Liu, DC	en_US
dc.date.accessioned	2014-12-08T15:02:11Z	-
dc.date.available	2014-12-08T15:02:11Z	-
dc.date.issued	1996-12-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/68.544686	en_US
dc.identifier.uri	http://hdl.handle.net/11536/877	-
dc.description.abstract	We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.	en_US
dc.language.iso	en_US	en_US
dc.title	Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/68.544686	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	8	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1588	en_US
dc.citation.epage	1590	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文

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