標題: Improved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layer
作者: Lai, Ming-Hui
Wu, Yewchung Sermon
Chang, Chih-Pang
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Drive-in nickel-induced crystallization;chemical oxide;fluorine ion implantation;metal-induced crystallization;thin-film transistors (TFTs)
公開日期: 1-Jun-2011
摘要: Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon thin-film transistors (TFTs). However, the Ni residues degrade the device performance. In this study, a new method for manufacturing MIC-TFTs using drive-in Ni-induced crystallization with a chemical oxide layer (DICC) is proposed. Compared with that of MIC-TFTs, the on/off current ratio (I (on)/I (off)) of DICC-TFTs was increased by a factor of 9.7 from 9.21 x 10(4) to 8.94 x 10(5). The leakage current (I (off)) of DICC-TFTs was 4.06 pA/mu m, which was much lower than that of the MIC-TFTs (19.20 pA/mu m). DICC-TFTs also possess high immunity against hot-carrier stress and thereby exhibit good reliability.
URI: http://dx.doi.org/10.1007/s11664-011-1522-3
http://hdl.handle.net/11536/8808
ISSN: 0361-5235
DOI: 10.1007/s11664-011-1522-3
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 40
Issue: 6
起始頁: 1470
結束頁: 1475
Appears in Collections:Articles


Files in This Item:

  1. 000290201500019.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.