Title: Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
Authors: Hsieh, Chih-Ren
Chen, Yung-Yu
Lu, Kwung-Wen
Lin, Gray
Lou, Jen-Chung
電機工程學系
Department of Electrical and Computer Engineering
Keywords: Flash memory;Fluorine;High-k dielectric;Inter-poly
Issue Date: 1-Jun-2011
Abstract: In this paper, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al(2)O(3)) and hafnium oxide (HfO(2)) inter-poly dielectric (IPD) are studied. Interface fluorine passivation has been demonstrated in terminating dangling bonds and oxygen vacancies, reducing interfacial re-oxidation and smoothing interface roughness, and diminishing trap densities. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al(2)O(3) and HfO(2) IPDs. Moreover, fluorine incorporation will also improve the dielectric quality of the interfacial layer. Although HfO(2) possesses higher dielectric constant to increase the gate coupling ratio, the results also demonstrate that fluorination of the Al(2)O(3) dielectric is more effective to promote the IPD characteristics than fluorination of the HfO(2) dielectric. For future stack-gate flash memory application, the fluorinated Al(2)O(3) IPD undoubtedly possesses higher potential to replace current ONO IPD than the fluorinated HfO(2) IPD due to superior insulating properties. (c) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.12.027
http://hdl.handle.net/11536/8826
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.12.027
Journal: MICROELECTRONIC ENGINEERING
Volume: 88
Issue: 6
Begin Page: 945
End Page: 949
Appears in Collections:Articles


Files in This Item:

  1. 000289186500016.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.