Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Kow-Ming | en_US |
dc.contributor.author | Huang, Sung-Hung | en_US |
dc.contributor.author | Wu, Chin-Jyi | en_US |
dc.contributor.author | Lin, Wei-Li | en_US |
dc.contributor.author | Chen, Wei-Chiang | en_US |
dc.contributor.author | Chi, Chia-Wei | en_US |
dc.contributor.author | Lin, Je-Wei | en_US |
dc.contributor.author | Chang, Chia-Chiang | en_US |
dc.date.accessioned | 2014-12-08T15:11:31Z | - |
dc.date.available | 2014-12-08T15:11:31Z | - |
dc.date.issued | 2011-05-31 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2011.01.156 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8831 | - |
dc.description.abstract | Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 x 10(-3) Omega cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 degrees C in open air, and average transmittance in the visible region was more than 80%. (C) 2011 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Transparent conductive oxide | en_US |
dc.subject | Atmospheric-pressure plasma | en_US |
dc.subject | Indium-doped zinc oxide | en_US |
dc.subject | Zinc nitrate | en_US |
dc.subject | Indium nitrate | en_US |
dc.title | Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.tsf.2011.01.156 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 519 | en_US |
dc.citation.issue | 15 | en_US |
dc.citation.spage | 5114 | en_US |
dc.citation.epage | 5117 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000292471400095 | - |
dc.citation.woscount | 14 | - |
Appears in Collections: | Articles |
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