| 標題: | 前瞻電阻式記憶體元件之新結構與新應用研究( I ) Study on Novel Structures and New Applications in Advanced Resistive Random Access Memory (I) |
| 作者: | 施敏 SZE SIMON MIN 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2014 |
| 官方說明文件#: | MOST103-2221-E009-175 |
| URI: | http://hdl.handle.net/11536/88847 https://www.grb.gov.tw/search/planDetail?id=8349434&docId=444792 |
| Appears in Collections: | Research Plans |
- 前瞻電阻式記憶體元件之新結構與新應用研究( II ) / 施敏;SZE SIMON MIN
- 電阻式記憶體新穎材料之開發與機制研究( I ) / 施敏;SZE SIMON MIN
- Current status of resistive nonvolatile memories / Lin, Chih-Yang;Liu, Chih-Yi;Lin, Chun-Chieh;Tseng, T. Y.
- 前瞻新結構電阻式記憶體元件之製作( I ) / 施敏;SZE SIMON MIN
- Novel Two-Bit-per-Cell Resistive-Switching Memory for Low-Cost Embedded Applications / Wu, Shih-Chieh;Lo, Chieh;Hou, Tuo-Hung
- 前瞻電阻式轉態記憶體元件之製作與特性研究 / 蔡侑廷;Tsai, Yu-Ting;曾俊元;張鼎張;Tseng, Tseung-Yuen
- Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films / Lin, Chun-Chieh;Lin, Chih-Yang;Lin, Meng-Han;Lin, Chen-Hsi;Tseng, Tseung-Yuen
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