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dc.contributor.author陳文雄en_US
dc.date.accessioned2014-12-13T10:29:10Z-
dc.date.available2014-12-13T10:29:10Z-
dc.date.issued2000en_US
dc.identifier.govdocNSC89-2112-M009-013zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/88933-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=523807&docId=95142en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject時域解析之冷激光光譜zh_TW
dc.subject氮化鎵zh_TW
dc.subject硫化鋅zh_TW
dc.subject量子井zh_TW
dc.subject量子點結構zh_TW
dc.subject載子輻射zh_TW
dc.subject非輻射復合zh_TW
dc.subjectTime resolved photoluminescenceen_US
dc.subjectInGaN/GaNen_US
dc.subjectZnSen_US
dc.subjectQuantum wellen_US
dc.subjectQuantum doten_US
dc.subjectRecombination of electron and holeen_US
dc.subjectRadiative/nonradiative recombinationen_US
dc.subjectCarrier life timeen_US
dc.title寬能隙半導體材料及其結構之時域解析光譜之研究zh_TW
dc.titleThe Studies on Wide Band-Gap Semiconductors and Their Structures by Time Resolved Photoluminescenceen_US
dc.typePlanen_US
dc.contributor.department交通大學電子物理系zh_TW
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