寬能隙半導體材料及其結構之時域解析光譜之研究

標題:	寬能隙半導體材料及其結構之時域解析光譜之研究 The Studies on Wide Band-Gap Semiconductors and Their Structures by Time Resolved Photoluminescence
作者:	陳文雄交通大學電子物理系
關鍵字:	時域解析之冷激光光譜;氮化鎵;硫化鋅;量子井;量子點結構;載子輻射;非輻射復合;Time resolved photoluminescence;InGaN/GaN;ZnS;Quantum well;Quantum dot;Recombination of electron and hole;Radiative/nonradiative recombination;Carrier life time
公開日期:	2000
官方說明文件#:	NSC89-2112-M009-013
URI:	http://hdl.handle.net/11536/88933 https://www.grb.gov.tw/search/planDetail?id=523807&docId=95142
Appears in Collections:	Research Plans

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