寬能隙半導體材料及其結構之時域解析光譜之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	陳文雄	en_US
dc.date.accessioned	2014-12-13T10:29:10Z	-
dc.date.available	2014-12-13T10:29:10Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2112-M009-013	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/88933	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=523807&docId=95142	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	時域解析之冷激光光譜	zh_TW
dc.subject	氮化鎵	zh_TW
dc.subject	硫化鋅	zh_TW
dc.subject	量子井	zh_TW
dc.subject	量子點結構	zh_TW
dc.subject	載子輻射	zh_TW
dc.subject	非輻射復合	zh_TW
dc.subject	Time resolved photoluminescence	en_US
dc.subject	InGaN/GaN	en_US
dc.subject	ZnS	en_US
dc.subject	Quantum well	en_US
dc.subject	Quantum dot	en_US
dc.subject	Recombination of electron and hole	en_US
dc.subject	Radiative/nonradiative recombination	en_US
dc.subject	Carrier life time	en_US
dc.title	寬能隙半導體材料及其結構之時域解析光譜之研究	zh_TW
dc.title	The Studies on Wide Band-Gap Semiconductors and Their Structures by Time Resolved Photoluminescence	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
顯示於類別：	研究計畫

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