完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Zhang, Xingui | en_US |
dc.contributor.author | Guo, Huaxin | en_US |
dc.contributor.author | Lin, Hau-Yu | en_US |
dc.contributor.author | Cheng, Chao-Ching | en_US |
dc.contributor.author | Ko, Chih-Hsin | en_US |
dc.contributor.author | Wann, Clement H. | en_US |
dc.contributor.author | Luo, Guang-Li | en_US |
dc.contributor.author | Chang, Chun-Yen | en_US |
dc.contributor.author | Chien, Chao-Hsin | en_US |
dc.contributor.author | Han, Zong-You | en_US |
dc.contributor.author | Huang, Shih-Chiang | en_US |
dc.contributor.author | Chin, Hock-Chun | en_US |
dc.contributor.author | Gong, Xiao | en_US |
dc.contributor.author | Koh, Shao-Ming | en_US |
dc.contributor.author | Lim, Phyllis Shi Ya | en_US |
dc.contributor.author | Yeo, Yee-Chia | en_US |
dc.date.accessioned | 2014-12-08T15:11:35Z | - |
dc.date.available | 2014-12-08T15:11:35Z | - |
dc.date.issued | 2011-05-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.3592211 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8897 | - |
dc.description.abstract | The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n(+) doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (rho(c)) of 1.57 Omega mm and sheet resistance (R(sh)) of 2.8 Omega/square was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592211] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.3592211 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000291111300033 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |