完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiao, Hung-Chouen_US
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorPeng, Cheng-Hsiungen_US
dc.contributor.authorLin, Chin-Chingen_US
dc.contributor.authorCheng, Syh-Yuhen_US
dc.date.accessioned2014-12-08T15:11:36Z-
dc.date.available2014-12-08T15:11:36Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2010.1693en_US
dc.identifier.urihttp://hdl.handle.net/11536/8901-
dc.description.abstractPhotoelectronic characteristics are investigated in well-aligned MgO-coated ZnO nanorods (MgO/ZnO nanocables) grown on Si substrates buffered with ZnO film at a low temperature by solution techniques. Transmission electron microscopy shows that a rough surface was observed for the MgO-coated ZnO nanorods due to deposition of MgO nanoparticles on the surface of the ZnO nanorods. However, after annealed at high temperatures, the surface of the MgO-coated ZnO nanorods was flattened to form Mg-doped ZnO nanorods. Photoluminescence spectra of Mg-doped ZnO nanorods displayed a blue shift of the near-band-edge emission with increasing annealing temperature indicative of an increase in the band gap of the MgZnO alloy due to diffusion of the Mg atoms into the ZnO nanorods. In contrast, no blue shift was detected for the samples annealed in H(2)/N(2) (5%/95%) reduction atmosphere but a blue emission was detected at 800 degrees C, indicating that MgO diffusion process may produce a new luminescent center to emit the blue emission in H(2)/N(2) reduction atmosphere.en_US
dc.language.isoen_USen_US
dc.subjectZnO Nanorodsen_US
dc.subjectAnnealingen_US
dc.subjectDopeden_US
dc.titleFabrication and Characterization of Mg-Doped ZnO Nanorod Arraysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1166/jnn.2010.1693en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume10en_US
dc.citation.issue7en_US
dc.citation.spage4696en_US
dc.citation.epage4700en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000277199300094-
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